公开(公告)号：US08815699B2

公开(公告)日：2014-08-26

申请号：US13670566

申请日：2012-11-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Tong Weihua ,  Krishnan Bharat ,  Lun Zhao ,  Kim Seung ,  Lee Yongmeng ,  Kim Sun

IPC: H01L21/76

CPC classification number: H01L21/823892 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

Abstract: Generally, the present disclosure is directed to methods for forming reverse shallow trench isolation structures with super-steep retrograde wells for use with field effect transistor elements. One illustrative method disclosed herein includes performing a thermal oxidation process to form a layer of thermal oxide material on a semiconductor layer of a semiconductor substrate, and forming a plurality of openings in the layer of thermal oxide material to form a plurality of isolation regions from the layer of thermal oxide material, wherein each of the plurality of openings exposes a respective surface region of the semiconductor layer.

Abstract translation: 通常，本公开涉及用于形成具有用于场效应晶体管元件的超陡逆向阱的反向浅沟槽隔离结构的方法。 本文公开的一种说明性方法包括进行热氧化工艺以在半导体衬底的半导体层上形成热氧化物层，并且在热氧化物材料层中形成多个开口以形成多个隔离区， 多层热氧化物材料，其中多个开口中的每一个露出半导体层的相应表面区域。

公开(公告)号：US20140124794A1

公开(公告)日：2014-05-08

申请号：US13670566

申请日：2012-11-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Tong Weihua ,  Krishnan Bharat ,  Lun Zhao ,  Kim Seung ,  Lee Yongmeng ,  Kim Sun

IPC: H01L21/20 ,  H01L27/092

CPC classification number: H01L21/823892 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

Abstract: Generally, the present disclosure is directed to methods for forming reverse shallow trench isolation structures with super-steep retrograde wells for use with field effect transistor elements. One illustrative method disclosed herein includes performing a thermal oxidation process to form a layer of thermal oxide material on a semiconductor layer of a semiconductor substrate, and forming a plurality of openings in the layer of thermal oxide material to form a plurality of isolation regions from the layer of thermal oxide material, wherein each of the plurality of openings exposes a respective surface region of the semiconductor layer.

Abstract translation: 通常，本公开涉及用于形成具有用于场效应晶体管元件的超陡逆向阱的反向浅沟槽隔离结构的方法。 本文公开的一种说明性方法包括进行热氧化工艺以在半导体衬底的半导体层上形成热氧化物层，并且在热氧化物材料层中形成多个开口以形成多个隔离区， 多层热氧化物材料，其中多个开口中的每一个露出半导体层的相应表面区域。