公开(公告)号：US10819110B2

公开(公告)日：2020-10-27

申请号：US15906475

申请日：2018-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anil Kumar ,  Manjunatha G. Prabhu ,  Alain F. Loiseau ,  Mahbub Rashed ,  Sushama Davar

IPC: H02H9/04 ,  H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection circuits and methods of use and manufacture. The structure includes: an electrostatic discharge (ESD) clamp which receives an input signal from a trigger circuit; and a voltage node connecting to a back gate of the ESD clamp, the voltage node providing a voltage to the ESD clamp during an electrostatic discharge (ESD) event.