公开(公告)号：US10438894B1

公开(公告)日：2019-10-08

申请号：US15993523

申请日：2018-05-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mukta Farooq ,  Koushik Ramachandran ,  Eric Perfecto ,  Ian Melville

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/498 ,  H01L25/065 ,  H01L23/00

Abstract: A multi-chip semiconductor device with multi-level structure including a substrate with a top substrate surface, a cavity with a depth in the substrate, a first chip having a top first chip surface with a first chip height, optionally including a second chip having a top second chip surface with a second chip height, and a connecting passive chip bridging the first chip, the second chip and the substrate by solder bumps wherein the solder bumps enable the connecting passive chip to be level.

公开(公告)号：US10215695B1

公开(公告)日：2019-02-26

申请号：US15961939

申请日：2018-04-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mukta Farooq ,  Michael Shur

IPC: G01J5/02 ,  G01N21/3581 ,  G01N21/3563 ,  G01N21/88 ,  G01N21/95

Abstract: An inspection system and method that use a differential technique to accurately detect interface defects at a resolution on the order of tens of nanometers or less. Specifically, a radiation source (e.g., a THz or sTHz radiation source) is used to illuminate a materials interface within an object under test (e.g., a semiconductor wafer, integrated circuit (IC) chip package, etc.) under selectively varied inspection conditions. Suitable detector(s) are used to capture images of the materials interface when that interface is illuminated under the selectively varied inspection conditions. The captured images can be compared and contrasted to determine an actual differential in a property of the images. Based on this actual differential, a determination can be made as to whether or not the materials interface is defective and, particularly, as to whether or not the materials interface contains defects even defects that are a few nanometers or less in size.