公开(公告)号：US20200098688A1

公开(公告)日：2020-03-26

申请号：US16140545

申请日：2018-09-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： YONGJUN SHI ,  RUILONG XIE ,  NAN FU ,  CHUN YU WONG

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/027 ,  H01L23/532 ,  H01L23/522 ,  H01L21/285

Abstract: A method of fabricating interconnects in a semiconductor device is provided, which includes forming an interconnect layer with a plurality of first conductive lines formed of a first conductive material in a dielectric layer. At least one via opening is formed over the plurality of first conductive lines and an interconnect via formed of a second conductive material is formed in the via opening, wherein the formed interconnect via has a convex top surface.