公开(公告)号：US10121706B2

公开(公告)日：2018-11-06

申请号：US15361809

申请日：2016-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Rinus T. P. Lee ,  Bharat V. Krishnan ,  Hui Zang ,  Matthew W. Stoker

IPC: H01L29/06 ,  H01L21/8238 ,  H01L29/32 ,  H01L27/092

Abstract: One aspect of the disclosure is directed to a method of forming a semiconductor structure. The method including: removing each fin in a set of fins from between insulator pillars to expose a portion of a substrate between each insulator pillar, the substrate having a first device region and a second device region; forming a first material over the exposed portions of the substrate between each insulator pillar, the first material including a two-dimensional material; forming a second material over the first material in the first device region, the second material including a first three-dimensional bonding material; and forming a third material over the exposed first material in the second device region, the third material including a second three-dimensional bonding material.

公开(公告)号：US20180151449A1

公开(公告)日：2018-05-31

申请号：US15361809

申请日：2016-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Rinus T. P. Lee ,  Bharat V. Krishnan ,  Hui Zang ,  Matthew W. Stoker

IPC: H01L21/8238 ,  H01L29/06 ,  H01L29/32 ,  H01L27/092

CPC classification number: H01L21/823821 ,  H01L21/02362 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/8258 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/785

Abstract: One aspect of the disclosure is directed to a method of forming a semiconductor structure. The method including: removing each fin in a set of fins from between insulator pillars to expose a portion of a substrate between each insulator pillar, the substrate having a first device region and a second device region; forming a first material over the exposed portions of the substrate between each insulator pillar, the first material including a two-dimensional material; forming a second material over the first material in the first device region, the second material including a first three-dimensional bonding material; and forming a third material over the exposed first material in the second device region, the third material including a second three-dimensional bonding material.