公开(公告)号：US20190267801A1

公开(公告)日：2019-08-29

申请号：US15906475

申请日：2018-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anil KUMAR ,  Manjunatha G. PRABHU ,  Alain F. LOISEAU ,  Mahbub RASHED ,  Sushama DAVAR

IPC: H02H9/04 ,  H01L27/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) protection circuits and methods of use and manufacture. The structure includes: an electrostatic discharge (ESD) clamp which receives an input signal from a trigger circuit; and a voltage node connecting to a back gate of the ESD clamp, the voltage node providing a voltage to the ESD clamp during an electrostatic discharge (ESD) event.