公开(公告)号：US10090209B2

公开(公告)日：2018-10-02

申请号：US15615072

申请日：2017-06-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Amit A. Dikshit ,  Tamilmani Ethirajan ,  Shrinivas J. Pandharpure ,  Vaidyanathan T. Subramanian ,  Josef S. Watts

IPC: H01G7/00 ,  H01L21/66 ,  G06F17/50 ,  G01R31/26

Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).

公开(公告)号：US20170271213A1

公开(公告)日：2017-09-21

申请号：US15615072

申请日：2017-06-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Amit A. Dikshit ,  Tamilmani Ethirajan ,  Shrinivas J. Pandharpure ,  Vaidyanathan T. Subramanian ,  Josef S. Watts

IPC: H01L21/66 ,  G06F17/50

CPC classification number: H01L22/14 ,  G01R31/2621 ,  G01R31/2625 ,  G06F17/5036 ,  G06F17/5063

Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).

公开(公告)号：US09704763B2

公开(公告)日：2017-07-11

申请号：US14146143

申请日：2014-01-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Amit A. Dikshit ,  Tamilmani Ethirajan ,  Shrinivas J. Pandharpure ,  Vaidyanathan T. Subramanian ,  Josef S. Watts

IPC: H01L21/84 ,  H01L21/66 ,  G06F17/50 ,  G01R31/26

CPC classification number: H01L22/14 ,  G01R31/2621 ,  G01R31/2625 ,  G06F17/5036 ,  G06F17/5063

Abstract: Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).