公开(公告)号：US10388729B2

公开(公告)日：2019-08-20

申请号：US15155761

申请日：2016-05-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： John Zhang ,  Lawrence Clevenger ,  Kangguo Cheng ,  Balasubramanian Haran

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/306 ,  H01L21/311 ,  H01L29/786 ,  H01L21/8234 ,  H01L29/165

Abstract: Devices and methods of fabricating integrated circuit devices for forming uniform nano sheet spacers self-aligned to the channel are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a substrate, multiple layers disposed on the substrate, and at least one gate structure disposed on the multiple layers; depositing an oxide layer over the device; etching the oxide layer to form replacement sidewall spacers positioned on left and right sides of the at least one gate structure; etching the multiple layers to form at least one stack structure; and forming a plurality of recesses within the at least one stack structure. Also disclosed is an intermediate semiconductor, which includes, for instance: a substrate; and at least one stack structure disposed on the substrate, the at least one stack structure having an upper portion and a base portion, wherein a plurality of recesses are located within the base portion.