公开(公告)号：US09252061B2

公开(公告)日：2016-02-02

申请号：US14243491

申请日：2014-04-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guoxiang Ning ,  Chan Seob Cho ,  Paul Ackmann ,  Jung Yu Hsieh ,  Hui Peng Koh

IPC: H01L23/544 ,  H01L21/66 ,  H01L21/306 ,  H01L27/088

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L21/3212 ,  H01L22/12 ,  H01L27/088 ,  H01L29/4916 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming dummy structures and an overlay mark protection zone over an active layer zone based on the shape of an overlay mark and the resulting device are provided. Embodiments include determining a size and a shape of an overlay mark; determining a size and a shape of an overlay mark protection zone based on the shape of the overlay mark; determining a shape of a plurality of dummy structures based on the shape of the overlay mark; determining a size and a shape of an active layer zone based on the size and the shape of the overlay mark and the plurality of dummy structures; forming the active layer zone in an active layer of a semiconductor substrate; forming the overlay mark and the plurality of dummy structures over the active layer zone in a poly layer of the semiconductor substrate; and planarizing the poly layer.

公开(公告)号：US09368453B2

公开(公告)日：2016-06-14

申请号：US14948476

申请日：2015-11-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guoxiang Ning ,  Chan Seob Cho ,  Paul Ackmann ,  Jung Yu Hsieh ,  Hui Peng Koh

IPC: H01L23/544 ,  H01L29/49

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L21/3212 ,  H01L22/12 ,  H01L27/088 ,  H01L29/4916 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming dummy structures and an overlay mark protection zone over an active layer zone based on the shape of an overlay mark and the resulting device are provided. Embodiments include determining a size and a shape of an overlay mark; determining a size and a shape of an overlay mark protection zone based on the shape of the overlay mark; determining a shape of a plurality of dummy structures based on the shape of the overlay mark; determining a size and a shape of an active layer zone based on the size and the shape of the overlay mark and the plurality of dummy structures; forming the active layer zone in an active layer of a semiconductor substrate; forming the overlay mark and the plurality of dummy structures over the active layer zone in a poly layer of the semiconductor substrate; and planarizing the poly layer.

Abstract translation: 提供了基于覆盖标记的形状和所得到的装置在有源层区域上形成虚拟结构和覆盖标记保护区域的方法。 实施例包括确定重叠标记的尺寸和形状; 基于覆盖标记的形状确定覆盖标记保护区的大小和形状; 基于重叠标记的形状确定多个虚拟结构的形状; 基于覆盖标记和多个虚拟结构的尺寸和形状来确定活动层区域的尺寸和形状; 在半导体衬底的有源层中形成有源层区; 在所述半导体衬底的多晶硅层中的所述有源层区域上形成所述覆盖标记和所述多个虚设结构; 并平坦化多层。