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公开(公告)号：US20240361705A1
公开(公告)日：2024-10-31
申请号：US18571649
申请日：2022-06-07
发明人： Sergey TARABRIN
CPC分类号： G03F7/706849 , G02B21/10 , G03F7/70408 , G03F7/70625 , G03F7/70633
摘要： Disclosed is a dark-field interferometric microscope and associated microscopy method. The microscope comprises an object branch being operable to propagate object radiation onto a sample and collect resultant scattered radiation from said sample and a reference branch being operable to propagate reference radiation. The object radiation and said reference radiation are mutually pointwise spatially coherent. A filter arrangement removes a zeroth order component from said scattered radiation to provide filtered scattered radiation; and a detection arrangement detects an interferometric image from interference of said filtered scattered radiation and reference radiation.
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2.发明公开公开(公告)号：US20240337954A1
公开(公告)日：2024-10-10
申请号：US18575518
申请日：2022-06-10
发明人： Giulio BOTTEGAL , Martijn JONGEN
IPC分类号： G03F7/00
CPC分类号： G03F7/706841 , G03F7/70633
摘要： Disclosed is a method of determining a reliability metric describing a reliability of metrology signal and/or a parameter of interest value derived therefrom and associated apparatuses. The method comprises obtaining a trained inference model for inferring a value for a parameter of interest from a measurement signal and one or more measurement signals and/or respective one or more values of a parameter of interest derived therefrom using said trained inference model. At least one reliability metric value is determined for the one or more measurement signals and/or respective one or more values of a parameter of interest, the reliability metric describing a reliability of one or more measurement signals and/or respective one or more values of a parameter of interest with respect to an accurate prediction space associated with the trained inference model.
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3.发明公开公开(公告)号：US20240312757A1
公开(公告)日：2024-09-19
申请号：US18674153
申请日：2024-05-24
申请人： FRACTILIA, LLC
发明人： Chris Mack
IPC分类号： H01J37/22 , G01Q30/02 , G01Q30/06 , G03F7/00 , G06T5/70 , G06T7/13 , G06T7/40 , G06T7/42 , G06T7/49 , H01J37/28
CPC分类号： H01J37/222 , G01Q30/02 , G01Q30/06 , G03F7/70433 , G03F7/70625 , G03F7/70633 , G06T5/70 , G06T7/13 , G06T7/40 , G06T7/42 , G06T7/49 , H01J37/28 , G06T2207/10061 , G06T2207/30148 , H01J2237/2814 , H01J2237/2817
摘要： In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.
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公开(公告)号：US20240302752A1
公开(公告)日：2024-09-12
申请号：US18548515
申请日：2022-03-01
申请人： Onto Innovation Inc.
IPC分类号： G03F7/00
CPC分类号： G03F7/70633 , G03F7/705 , G03F7/70791
摘要： A lithography challenge for large heterogeneous integration of integrated circuit devices is the limited size of the exposure field (typically 60 mm×60 mm or smaller) for most currently available lithography systems, Smaller-field systems can be used to pattern large substrates (e.g., panels) by stitching together multiple exposure fields. However, the stitching of exposure fields affects both productivity and yield because of the need for multiple exposures, which includes multiple reticles, and a risk of alignment errors at the stitching boundaries, A large-exposure field eliminates these problems associated with smaller exposure fields. However, there are also challenges associated with a large-exposure field, such as exposing onto a possibly warped or distorted panel. Various examples disclosed herein include a post-overlay compensation method that use an overlay-model prior to exposing the panel to reduce or eliminate errors due to the warped, or distorted panel. Other methods and systems are also disclosed.
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公开(公告)号：US20240302164A1
公开(公告)日：2024-09-12
申请号：US18580062
申请日：2022-07-18
CPC分类号： G01B11/272 , G03F7/70633 , G03F7/706849 , G03F7/706851
摘要： An optical element, and a metrology tool or system employing the optical element for measurements of structures on a substrate. The optical element includes a first portion configured to reflect the light received from an illumination source towards the substrate, and a second portion configured to transmit the light redirected from the substrate or a desired location, the first portion having a higher coefficient of reflectivity than the second portion, and the second portion having a higher coefficient of transmissivity than the first portion. A metrology tool may include the optical elements and a sensor configured to receive a diffraction pattern caused by radiation redirected from a substrate, and a processor configured to receive a signal relating to the diffraction pattern from the sensor, and determine overlay associated with the substrate by analyzing the signal.
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公开(公告)号：US12085383B2
公开(公告)日：2024-09-10
申请号：US17641602
申请日：2020-09-08
发明人： Gyu Nam Park , Hyeon Gi Shin , Seung Soo Lee
CPC分类号： G01B11/27 , G01B11/0608 , G03F7/70633 , G03F7/7085 , G03F9/7088 , H01L21/67259
摘要： An overlay measurement device measures an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer. The device is configured to detect a height of the first overlay mark based on a change in the signal of the first detector according to a change in the relative position of the objective lens with respect to the wafer in the optical axis direction and detect a height of the second overlay mark based on a change in the signal of the second detector according to a change in the relative position of the objective lens with respect to the wafer in the optical axis direction.
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公开(公告)号：US20240295827A1
公开(公告)日：2024-09-05
申请号：US17762030
申请日：2022-03-04
申请人： KLA Corporation
发明人： Yoel Feler , Mark Ghinovker , Nir BenDavid , Yoram Uziel
IPC分类号： G03F7/00
CPC分类号： G03F7/70633 , G03F7/70516 , G03F7/70625
摘要： A method for semiconductor metrology includes depositing first and second film layers on a substrate, patterning the layers to define a first target including a first feature in the first layer and a second feature in the second layer adjacent to the first feature, and a second target on the substrate including a first part, which is identical to the first target, and a second part adjacent to the first part such that the second overlay target has rotational symmetry of 180° around a normal to the substrate. The method further includes capturing and processing a first image of the second target to compute a calibration function based on the first and second parts of the target, and capturing and processing a second image of the first target while applying the calibration function to estimate an overlay error between the first and second film layers at the first location.
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公开(公告)号：US20240288782A1
公开(公告)日：2024-08-29
申请号：US18289765
申请日：2022-05-02
发明人： Zili ZHOU , Daan SWINKELS , Jin LIAN
IPC分类号： G03F7/00
CPC分类号： G03F7/706849 , G03F7/70633 , G03F7/70641 , G03F7/706831 , G03F7/706837 , G03F7/706845 , G03F7/706851
摘要： A method of measuring an overlay or focus parameter from a target and associated metrology apparatus. The method includes configuring measurement radiation to obtain a configured measurement spectrum of the measurement radiation by: imposing an intensity weighting on individual wavelength bands of the measurement radiation such that the individual wavelength bands have an intensity according to the intensity weighting, the intensity weighting being such that a measured value for the overlay or focus parameter is at least partially corrected for the effect of target imperfections; and/or imposing a modulation on a measurement spectrum of the measurement radiation. The configured measurement radiation is used to measure the target. A value for the overlay or focus parameter is determined from scattered radiation resultant from measurement of the target.
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公开(公告)号：US20240282576A1
公开(公告)日：2024-08-22
申请号：US18535594
申请日：2023-12-11
发明人： Hyungju RYU , Sangjin KIM , Yigwon KIM , Jongsu KIM
IPC分类号： H01L21/027 , G03F7/00 , H01L21/304
CPC分类号： H01L21/0274 , G03F7/70625 , G03F7/70633 , H01L21/3043
摘要： A method of manufacturing a semiconductor device includes bonding a first semiconductor substrate on a second semiconductor substrate; performing a first physical parameter measurement on a first surface of the first semiconductor substrate to obtain first displacement data; polishing the first surface of the first semiconductor substrate after the first displacement data is obtained; performing a second physical parameter measurement on the polished first surface of the first semiconductor substrate to obtain second displacement data; and forming circuit patterns on the polished first surface of the first semiconductor substrate based on the second displacement data.
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公开(公告)号：US12068157B2
公开(公告)日：2024-08-20
申请号：US17385069
申请日：2021-07-26
发明人： Hyun Seung Ha , Jang Hoon Kim , Tae-Kyu Kim , Young Kuk Byun , Jong Hyun Jung
IPC分类号： H01L21/027 , G03F7/00 , G03F7/20 , H01L21/66
CPC分类号： H01L21/0274 , G03F7/70633 , H01L22/12
摘要： A method of manufacturing a semiconductor device includes forming a first lower overlay key including first and second patterns in a lower layer, forming a first upper overlay key including third and fourth patterns in an upper layer vertically disposed on the lower layer, irradiating a first measurement light to a first region of interest (ROI) over first portions of the first and second patterns to detect a first overlay error and irradiating a second measurement light to a second ROI over second portions of the first and second patterns, the second ROI being different from the first ROI, to detect a second overlay error.
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