公开(公告)号：US10833012B2

公开(公告)日：2020-11-10

申请号：US16587270

申请日：2019-09-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chien-Hsin Lee ,  Haojun Zhang ,  Mahadeva Iyer Natarajan

IPC: H01L23/528 ,  H01L23/60 ,  H01L23/522 ,  H01P1/18

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

公开(公告)号：US20190244954A1

公开(公告)日：2019-08-08

申请号：US15889635

申请日：2018-02-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Mahadeva Iyer Natarajan ,  Haojun Zhang ,  Chien-Hsin Lee

IPC: H01L27/02 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L27/0292 ,  H01L21/768 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238

Abstract: Structures for a frequency divider, methods of fabricating a frequency divider, and method of using a frequency divider. A first interconnect line is configured to selectively conduct a first signal of a first frequency. A second interconnect line is coupled with the first interconnect line. The second interconnect line is configured to selectively conduct a second signal of a second frequency. The first frequency is less the second frequency.

公开(公告)号：US10510663B2

公开(公告)日：2019-12-17

申请号：US15474354

申请日：2017-03-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chien-Hsin Lee ,  Haojun Zhang ,  Mahadeva Iyer Natarajan

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/60 ,  H01P1/18

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.

公开(公告)号：US10403622B2

公开(公告)日：2019-09-03

申请号：US15889635

申请日：2018-02-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Mahadeva Iyer Natarajan ,  Haojun Zhang ,  Chien-Hsin Lee

IPC: H01L23/48 ,  H01L27/02 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532

Abstract: Structures for a frequency divider, methods of fabricating a frequency divider, and method of using a frequency divider. A first interconnect line is configured to selectively conduct a first signal of a first frequency. A second interconnect line is coupled with the first interconnect line. The second interconnect line is configured to selectively conduct a second signal of a second frequency. The first frequency is less the second frequency.

公开(公告)号：US10153224B2

公开(公告)日：2018-12-11

申请号：US15264957

申请日：2016-09-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rahul Agarwal ,  Luke England ,  Haojun Zhang

IPC: H01L23/367 ,  H01L23/00 ,  H01L21/288

Abstract: Methods for reducing the junction temperature between an IC chip and its lid by including metal spacers in the TIM layer and the resulting devices are disclosed. Embodiments include providing a substrate, including integrated circuit devices, having front and back sides; forming vertical spacers on the backside of the substrate; providing a plate parallel to and spaced from the backside of the substrate; and forming a TIM layer, surrounding the vertical spacers, between the backside of the substrate and the plate.