公开(公告)号：US08847205B2

公开(公告)日：2014-09-30

申请号：US14023966

申请日：2013-09-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hartmut Ruelke ,  Katja Huy ,  Markus Lenski

IPC: H01L29/06 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/66 ,  H01L29/78 ,  H01L29/66 ,  H01L21/318

CPC classification number: H01L22/10 ,  H01L21/3185 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843

Abstract: By reducing a deposition rate and maintaining a low bias power in a plasma atmosphere, a spacer layer, for example a silicon nitride layer, may be deposited that exhibits tensile stress. The amount of tensile stress is controllable within a wide range, thereby providing the potential for forming sidewall spacer elements that modify the charge carrier mobility and thus the conductivity of the channel region of a field effect transistor.

Abstract translation: 通过降低沉积速率并保持等离子体气氛中的低偏压功率，可以沉积显示拉伸应力的间隔层，例如氮化硅层。 拉伸应力的量在宽范围内是可控的，从而提供形成改变电场载流子迁移率并因此改变场效应晶体管的沟道区的导电性的侧壁间隔元件的潜力。

公开(公告)号：US20140011302A1

公开(公告)日：2014-01-09

申请号：US14023966

申请日：2013-09-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hartmut Ruelke ,  Katja Huy ,  Markus Lenski

IPC: H01L21/66

CPC classification number: H01L22/10 ,  H01L21/3185 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843

Abstract: By reducing a deposition rate and maintaining a low bias power in a plasma atmosphere, a spacer layer, for example a silicon nitride layer, may be deposited that exhibits tensile stress. The amount of tensile stress is controllable within a wide range, thereby providing the potential for forming sidewall spacer elements that modify the charge carrier mobility and thus the conductivity of the channel region of a field effect transistor.

Abstract translation: 通过降低沉积速率并保持等离子体气氛中的低偏压功率，可以沉积显示拉伸应力的间隔层，例如氮化硅层。 拉伸应力的量在宽范围内是可控的，从而提供形成改变电场载流子迁移率并因此改变场效应晶体管的沟道区的导电性的侧壁间隔元件的潜力。