公开(公告)号：US20140203298A1

公开(公告)日：2014-07-24

申请号：US14219910

申请日：2014-03-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jeremy A. WAHL ,  Kingsuk MAITRA

IPC: H01L27/092 ,  H01L29/16

CPC classification number: H01L27/092 ,  H01L21/26506 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/66651 ,  H01L29/78

Abstract: A semiconductor is formed on a (110) silicon (Si) substrate, with improved electron mobility. Embodiments include semiconductor devices having a silicon carbide (SiC) portion in the nFET channel region. An embodiment includes forming an nFET channel region and a pFET channel region in a Si substrate, such as a (110) Si substrate, and forming a silicon carbide (SiC) portion on the nFET channel region. The SiC portion may be formed by ion implantation of C followed by a recrystallization anneal or by epitaxial growth of SiC in a recess formed in the substrate. The use of SiC in the nFET channel region improves electron mobility without introducing topographical differences between NMOS and PMOS transistors.

Abstract translation: 在（110）硅（Si）衬底上形成半导体，具有改善的电子迁移率。 实施例包括在nFET沟道区域中具有碳化硅（SiC）部分的半导体器件。 一个实施例包括在诸如（110）Si衬底的Si衬底中形成nFET沟道区和pFET沟道区，并在nFET沟道区上形成碳化硅（SiC）部分。 SiC部分可以通过C的离子注入，然后通过在衬底中形成的凹槽中的SiC再结晶退火或外延生长来形成。 在nFET通道区域中使用SiC可以提高电子迁移率，而不会导致NMOS和PMOS晶体管之间的形貌差异。