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公开(公告)号:US10121893B2
公开(公告)日:2018-11-06
申请号:US15797634
申请日:2017-10-30
Applicant: GLOBALFOUNDRIES Inc.
Inventor: Hui Zang , Manfred J Eller , Min-Hwa Chi , Jerome J. B. Ciavatti
IPC: H01L29/66 , H01L29/423 , H01L29/78 , H01L27/088 , H01L29/417 , H01L29/49 , H01L27/11
Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a gate structure between a pair of gate spacers within a dielectric layer and substantially surrounding a fin, wherein the gate structure is disposed adjacent to a channel region within the fin; and a source/drain contact extending within the dielectric layer to a source/drain region within a fin, the source/drain contact being separated from the gate structure by at least one gate spacer in the pair of gate spacers, wherein the channel region and the source/drain region provide electrical connection between the gate structure and the source/drain contact.
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公开(公告)号:US09842927B1
公开(公告)日:2017-12-12
申请号:US15248367
申请日:2016-08-26
Applicant: GLOBALFOUNDRIES Inc.
Inventor: Hui Zang , Manfred J Eller , Min-Hwa Chi , Jerome J. B. Ciavatti
IPC: H01L29/49 , H01L29/43 , H01L27/092 , H01L21/28 , H01L29/78 , H01L29/66 , H01L29/417
CPC classification number: H01L29/783 , H01L27/1104 , H01L29/41775 , H01L29/4975 , H01L29/66545 , H01L29/66795
Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a gate structure between a pair of gate spacers within a dielectric layer and substantially surrounding a fin, wherein the gate structure is disposed adjacent to a channel region within the fin; and a source/drain contact extending within the dielectric layer to a source/drain region within a fin, the source/drain contact being separated from the gate structure by at least one gate spacer in the pair of gate spacers, wherein the channel region and the source/drain region provide electrical connection between the gate structure and the source/drain contact.
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