公开(公告)号：US20140357073A1

公开(公告)日：2014-12-04

申请号：US13909184

申请日：2013-06-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hongxiang MO ,  Nam Sung KIM

IPC: H01L21/28

CPC classification number: H01L29/66553 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66545

Abstract: A method includes providing a gate structure with at least one side wall and a bottom. At least one first spacer layer is formed over the at least one side wall. An offset spacer layer is formed over the at least one first spacer layer and the bottom. A bottom portion of the offset spacer layer is selectively removed to expose the bottom.

Abstract translation: 一种方法包括提供具有至少一个侧壁和底部的栅极结构。 在至少一个侧壁上形成至少一个第一间隔层。 在至少一个第一间隔层和底部上形成偏移间隔层。 选择性地去除偏移间隔层的底部以露出底部。