公开(公告)号：US10276453B1

公开(公告)日：2019-04-30

申请号：US15922321

申请日：2018-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Nan Wu

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/28 ,  H01L21/3213

Abstract: Structures that include vertically-arranged field-effect transistors and methods for forming a structure that includes vertically-arranged field-effect transistors. A first field-effect transistor includes a section of a first fin, a first source/drain region, and a second source/drain region. The section of the first fin is arranged between the first source/drain region and the second source/drain region of the first field-effect transistor. A second field-effect transistor includes a second fin arranged over the section of the first fin, a first source/drain region, and a second source/drain region. A functional gate structure has an overlapping arrangement with the section of the first fin and also has an overlapping arrangement with a section of the second fin that is arranged between the first source/drain region and the second source/drain region of the second field-effect transistor.

公开(公告)号：US10727236B2

公开(公告)日：2020-07-28

申请号：US16229600

申请日：2018-12-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Nan Wu ,  Peter Baars

IPC: H01L27/11 ,  H01L27/088 ,  G11C11/412

Abstract: Structures that include stacked field-effect transistors and methods for forming a structure that includes stacked field-effect transistors. A structure includes a first fin, a second fin arranged over the first fin, a first dielectric layer between the first fin and the second fin, and a first inverter. The first inverter includes a first field-effect transistor with a channel region in the first fin and a second field-effect transistor with a channel region in the second fin. The first field-effect transistor and the second field-effect transistor share a first gate structure having an overlapping arrangement with the channel region in the first fin and the channel region in the second fin. The first fin has a longitudinal axis, and the second fin has a longitudinal axis that is aligned at an angle relative to the longitudinal axis of the first fin.