公开(公告)号：US20200098909A1

公开(公告)日：2020-03-26

申请号：US16137739

申请日：2018-09-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Robert Gauthier, JR. ,  Souvick Mitra ,  Alain Loiseau ,  Tsai Tsung-Che ,  Mickey Yu ,  You Li

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: Structures for laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices, as well as methods of forming laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices. A gate electrode is arranged to extend about a semiconductor fin projecting from a substrate. A drain region is arranged in the substrate, and a source region is coupled with the semiconductor fin. The source region is arranged over the semiconductor fin. A drift region is arranged in the substrate between the drain region and the semiconductor fin. The drain region, source region, and drift region have a given conductivity type. The drift region has a lower electrical conductivity than the drain region.