公开(公告)号：US10068918B2

公开(公告)日：2018-09-04

申请号：US15375890

申请日：2016-12-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Christian Haufe ,  Ingolf Lorenz ,  Michael Zier ,  Ulrich Gerhard Hensel ,  Navneet Jain

IPC: H01L27/12 ,  H01L29/49 ,  H01L21/84 ,  H01L29/06

Abstract: An integrated circuit is provided including a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate, a plurality of cells, each cell having a transistor device, formed over the buried oxide layer, a plurality of gate electrode lines running through the cells and providing gate electrodes for the transistor devices of the cells, and a plurality of tap cells configured for electrically contacting the semiconductor bulk substrate and arranged at positions different from positions below or above the plurality of cells having the transistor devices.

公开(公告)号：US20170104005A1

公开(公告)日：2017-04-13

申请号：US15375890

申请日：2016-12-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Christian Haufe ,  Ingolf Lorenz ,  Michael Zier ,  Ulrich Gerhard Hensel ,  Navneet Jain

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/06 ,  H01L29/49

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L29/0696 ,  H01L29/4916 ,  H01L29/78648

Abstract: An integrated circuit is provided including a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate, a plurality of cells, each cell having a transistor device, formed over the buried oxide layer, a plurality of gate electrode lines running through the cells and providing gate electrodes for the transistor devices of the cells, and a plurality of tap cells configured for electrically contacting the semiconductor bulk substrate and arranged at positions different from positions below or above the plurality of cells having the transistor devices.