公开(公告)号：US09064868B2

公开(公告)日：2015-06-23

申请号：US13650233

申请日：2012-10-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yanxiang Liu ,  Vara Vakada ,  Jerome Ciavatti

IPC: H01L29/66 ,  H01L23/522

CPC classification number: H01L23/5225 ,  H01L29/0653 ,  H01L29/402 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One illustrative device disclosed herein includes a transistor comprising a gate electrode and a drain region formed in a semiconducting substrate, an isolation structure formed in the substrate, wherein the isolation structure is laterally positioned between the gate electrode and the drain region, and a Faraday shield that is positioned laterally between the gate electrode and the drain region and above the isolation structure, wherein the Faraday shield has a long axis that is oriented substantially vertically relative to an upper surface of the substrate.

Abstract translation: 本文公开的一种说明性器件包括晶体管，其包括形成在半导体衬底中的栅电极和漏区，形成在衬底中的隔离结构，其中隔离结构横向地位于栅电极和漏区之间，法拉第屏蔽 其位于栅极电极和漏极区域之间并且隔离结构之上，其中法拉第屏蔽具有相对于衬底的上表面基本垂直取向的长轴。

公开(公告)号：US20140103420A1

公开(公告)日：2014-04-17

申请号：US13650233

申请日：2012-10-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yanxiang Liu ,  Vara Vakada ,  Jerome Ciavatti

IPC: H01L29/78

CPC classification number: H01L23/5225 ,  H01L29/0653 ,  H01L29/402 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One illustrative device disclosed herein includes a transistor comprising a gate electrode and a drain region formed in a semiconducting substrate, an isolation structure formed in the substrate, wherein the isolation structure is laterally positioned between the gate electrode and the drain region, and a Faraday shield that is positioned laterally between the gate electrode and the drain region and above the isolation structure, wherein the Faraday shield has a long axis that is oriented substantially vertically relative to an upper surface of the substrate.

Abstract translation: 本文公开的一种说明性器件包括晶体管，其包括形成在半导体衬底中的栅电极和漏区，形成在衬底中的隔离结构，其中隔离结构横向地位于栅电极和漏区之间，法拉第屏蔽 其位于栅极电极和漏极区域之间并且隔离结构之上，其中法拉第屏蔽具有相对于衬底的上表面基本垂直取向的长轴。