公开(公告)号：US20210159336A1

公开(公告)日：2021-05-27

申请号：US16691691

申请日：2019-11-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Anthony K. STAMPER ,  Aaron L. VALLETT ,  Steven M. SHANK ,  John J. ELLIS-MONAGHAN

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L29/45 ,  H01L29/417 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to vertical field effect transistors (FETS) and methods of manufacture. The structure includes: a substrate material; at least one vertically oriented gate structure extending into the substrate material and composed of a gate dielectric material and conductive gate material; and vertically oriented source/drain regions extending into the substrate material and composed of conductive dopant material and a silicide on the source/drain regions.