公开(公告)号：US11127623B2

公开(公告)日：2021-09-21

申请号：US16213189

申请日：2018-12-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Hui Zang ,  Ruilong Xie ,  Jessica M. Dechene

IPC: H01L21/308 ,  H01L21/762 ,  H01L29/66 ,  H01L27/088

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.

公开(公告)号：US11810812B2

公开(公告)日：2023-11-07

申请号：US17382645

申请日：2021-07-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Hui Zang ,  Ruilong Xie ,  Jessica M. Dechene

IPC: H01L21/762 ,  H01L29/66 ,  H01L21/308 ,  H01L27/088

CPC classification number: H01L21/76232 ,  H01L21/3086 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/66795

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.