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公开(公告)号:US20210242306A1
公开(公告)日:2021-08-05
申请号:US16780494
申请日:2020-02-03
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor: Shiv Kumar MISHRA , Baofu ZHU , Arkadiusz MALINOWSKI , Kaushikee MISHRA
IPC: H01L29/06 , H01L29/78 , H01L21/74 , H01L29/10 , H01L21/762 , H01L29/66 , H01L21/266 , H01L21/265
Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to dual trench isolation structures and methods of manufacture. The structure includes: a doped well region in a substrate; a dual trench isolation region within the doped well region, the dual trench isolation region comprising a first isolation region of a first depth and a second isolation region of a second depth, different than the first depth; and a gate structure on the substrate and extending over a portion of the dual trench isolation region.