公开(公告)号：US20210143254A1

公开(公告)日：2021-05-13

申请号：US16676488

申请日：2019-11-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Jiehui SHU ,  Rinus Tek Po LEE ,  Baofu ZHU

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L27/088 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to asymmetric source and drain structures and methods of manufacture. The structure includes: at least one gate structure; a straight spacer adjacent to the at least one gate structure; and an L-shaped spacer on a side of the at least one gate structure opposing the straight spacer, the L-shaped spacer extending a first diffusion region further away from the at least one gate structure than the straight spacer extends a second diffusion region on a second side away from the at least one gate structure.

公开(公告)号：US20210242306A1

公开(公告)日：2021-08-05

申请号：US16780494

申请日：2020-02-03

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Shiv Kumar MISHRA ,  Baofu ZHU ,  Arkadiusz MALINOWSKI ,  Kaushikee MISHRA

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/74 ,  H01L29/10 ,  H01L21/762 ,  H01L29/66 ,  H01L21/266 ,  H01L21/265

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to dual trench isolation structures and methods of manufacture. The structure includes: a doped well region in a substrate; a dual trench isolation region within the doped well region, the dual trench isolation region comprising a first isolation region of a first depth and a second isolation region of a second depth, different than the first depth; and a gate structure on the substrate and extending over a portion of the dual trench isolation region.