公开(公告)号：US20210265198A1

公开(公告)日：2021-08-26

申请号：US16800011

申请日：2020-02-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. Stamper ,  Henry L. Aldridge, JR. ,  Johnatan A. Kantarovsky ,  Jeonghyun Hwang

IPC: H01L21/762 ,  H01L21/763 ,  H01L29/06

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.