公开(公告)号：US11651884B2

公开(公告)日：2023-05-16

申请号：US16365121

申请日：2019-03-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Venkata N. R. Vanukuru ,  Umesh Kumar Shukla ,  Sandeep Torgal

IPC: H01L23/52 ,  H01F17/00 ,  H01L23/60 ,  H01L23/522

CPC classification number: H01F17/0013 ,  H01L23/5227 ,  H01L23/60

Abstract: Structures that include a peaking inductor and a T-coil, and methods associated with forming such structures. A back-end-of-line interconnect structure includes a first metallization level, a second metallization level, and a third metallization level arranged between the first metallization level and the second metallization level. The T-coil includes a first inductor with a first coil arranged in the first metallization level and a second inductor with a second coil arranged in the second metallization level. A peaking inductor includes a coil arranged in the third metallization level. The first coil of the first inductor, the second coil of the second inductor, and the coil of the peaking inductor are stacked in the back-end-of-line interconnect structure with an overlapping arrangement.