公开(公告)号：US11538815B2

公开(公告)日：2022-12-27

申请号：US16935691

申请日：2020-07-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Oscar D. Restrepo ,  Edmund K. Banghart ,  William Taylor

IPC: H01L27/112 ,  H01L29/66 ,  H01L29/78 ,  H01L27/02 ,  H01L27/105 ,  H01L29/06

Abstract: Structures for an array of non-volatile memory cells and methods of forming a structure for an array of non-volatile memory cells. An active region of a substrate includes a first section having a side edge and a second section extending laterally from the side edge. The first section of the active region has a first length dimension in a direction parallel to the first side edge. The second section has a second length dimension in the direction parallel to the first side edge. The second length dimension is less than the first length dimension. A fin is positioned on the substrate in the second section of the active region. A gate structure extends over the fin and the second section of the active region.

公开(公告)号：US20220028873A1

公开(公告)日：2022-01-27

申请号：US16935691

申请日：2020-07-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Oscar D. Restrepo ,  Edmund K. Banghart ,  William Taylor

IPC: H01L27/112 ,  H01L29/78 ,  H01L29/66

Abstract: Structures for an array of non-volatile memory cells and methods of forming a structure for an array of non-volatile memory cells. An active region of a substrate includes a first section having a side edge and a second section extending laterally from the side edge. The first section of the active region has a first length dimension in a direction parallel to the first side edge. The second section has a second length dimension in the direction parallel to the first side edge. The second length dimension is less than the first length dimension. A fin is positioned on the substrate in the second section of the active region. A gate structure extends over the fin and the second section of the active region.