公开(公告)号：US11545574B2

公开(公告)日：2023-01-03

申请号：US16994915

申请日：2020-08-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Rinus Lee ,  Sipeng Gu ,  Yue Hu

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: Structures for a single diffusion break and methods of forming a structure for a single diffusion break. A cut is formed in a semiconductor fin. A single diffusion break includes a first dielectric layer in the cut and a second dielectric layer over the first dielectric layer. The first dielectric layer is comprised of a first material, and the second dielectric layer is comprised of a second material having a different composition than the first material. The second dielectric layer includes a first portion over the first dielectric layer and a second portion over the first portion. The first portion of the second dielectric layer has a first horizontal dimension, and the second portion of the second dielectric layer has a second horizontal dimension that is greater than the first horizontal dimension.