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1.发明申请Use of Scanning Theme Implanters and Annealers for Selective Implantation and Annealing 有权使用扫描主题进口机和退火机进行选择性植入和退火公开(公告)号：US20070281450A1
公开(公告)日：2007-12-06
申请号：US11420819
申请日：2006-05-30
IPC分类号： H01L21/04
CPC分类号： H01L21/268 , H01J2237/31701 , H01L21/265
摘要： A method and system for integrated circuit (IC) processing combines an ion implantation tool and a laser anneal tool in a single unit with a shared precision X-Y scanner. A semiconductor wafer is loaded onto a the X-Y table of the scanner. Data defining the desired ion implantation is used to first customize circuit areas on the semiconductor wafer by gating ON and OFF the ion beam while semiconductor wafer is scanned. Any inadvertent ion beam interruptions are noted by storing the locations of the interruptions. The wafer is then reprocessed to correct faults caused by the interruptions. The laser anneal tool positions the laser beam over the semiconductor wafer it is then scanned while gating the laser beam ON and OFF to custom anneal the wafer devices. Again, any inadvertent laser beam interruptions are detected and the locations of the interruptions are stored for reprocessing to correct faults.
摘要翻译： 用于集成电路（IC）处理的方法和系统将离子注入工具和激光退火工具组合在具有共享精密X-Y扫描器的单个单元中。 将半导体晶片装载到扫描器的X-Y台上。 定义所需离子注入的数据用于首先通过在扫描半导体晶片时门控ON和OFF离子束来定制半导体晶片上的电路区域。 通过存储中断的位置来注意任何无意的离子束中断。 然后重新处理晶片以纠正由中断引起的故障。 激光退火工具将激光束定位在半导体晶片上，然后扫描激光束，同时选通激光束打开和关闭以定制退火晶片器件。 再次，检测到任何无意的激光束中断，并且存储中断的位置用于重新处理以校正故障。
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2.发明授权Use of scanning theme implanters and annealers for selective implantation and annealing 有权使用扫描主题植入器和退火炉进行选择性植入和退火公开(公告)号：US07504326B2
公开(公告)日：2009-03-17
申请号：US11420819
申请日：2006-05-30
IPC分类号： H01L21/04
CPC分类号： H01L21/268 , H01J2237/31701 , H01L21/265
摘要： A method and system for integrated circuit (IC) processing combines an ion implantation tool and a laser anneal tool in a single unit with a shared precision X-Y scanner. A semiconductor wafer is loaded onto a the X-Y table of the scanner. Data defining the desired ion implantation is used to first customize circuit areas on the semiconductor wafer by gating ON and OFF the ion beam while semiconductor wafer is scanned. Any inadvertent ion beam interruptions are noted by storing the locations of the interruptions. The wafer is then reprocessed to correct faults caused by the interruptions. The laser anneal tool positions the laser beam over the semiconductor wafer it is then scanned while gating the laser beam ON and OFF to custom anneal the wafer devices. Again, any inadvertent laser beam interruptions are detected and the locations of the interruptions are stored for reprocessing to correct faults.
摘要翻译： 用于集成电路（IC）处理的方法和系统将离子注入工具和激光退火工具组合在具有共享精密X-Y扫描器的单个单元中。 将半导体晶片装载到扫描器的X-Y台上。 定义所需离子注入的数据用于首先通过在扫描半导体晶片时门控ON和OFF离子束来定制半导体晶片上的电路区域。 通过存储中断的位置来注意任何无意的离子束中断。 然后重新处理晶片以纠正由中断引起的故障。 激光退火工具将激光束定位在半导体晶片上，然后扫描激光束，同时选通激光束打开和关闭以定制退火晶片器件。 再次，检测到任何无意的激光束中断，并且存储中断的位置用于重新处理以校正故障。
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