公开(公告)号：US20240304612A1

公开(公告)日：2024-09-12

申请号：US18118323

申请日：2023-03-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani PANDEY ,  Sagar Premnath KARALKAR ,  Rajendran KRISHNASAMY ,  Anindya NATH

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high performance silicon controlled rectifier (SCR) devices and methods of manufacture. The structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; a plurality of shallow trench isolation structures extending into the first well and the second well; and a deep trench isolation structure between the plurality of shallow trench isolation structures and extending into the semiconductor material deeper than the plurality of shallow trench isolation structures.

公开(公告)号：US20240282847A1

公开(公告)日：2024-08-22

申请号：US18111959

申请日：2023-02-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani PANDEY ,  Sagar Premnath KARALKAR ,  Rajendran KRISHNASAMY ,  Chung Foong TAN

IPC: H01L29/74 ,  H01L29/66

CPC classification number: H01L29/74 ,  H01L29/66363

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high performance silicon controlled rectifier (SCR) devices and methods of manufacture. The structure includes: a first well in a semiconductor substrate; a second well in the semiconductor substrate, adjacent to the first well; and a porous semiconductor region extending in the first well and the second well.