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公开(公告)号:US20240218557A1
公开(公告)日:2024-07-04
申请号:US18396266
申请日:2023-12-26
发明人: Carlo Zavattari , Michael Raffeiner , Paolo Delpero , Peter Albrecht , Fabrizio Bonda , Massimo Gariddi , Patrizio Pregnolato , Pietro Valcozzena , Maria Porrini
摘要: Methods for producing an off-orientation single crystal silicon wafer are disclosed. After a single crystal silicon ingot is grown, the single crystal silicon ingot is ground to increase an off-orientation of the single crystal silicon ingot. A wafer is sliced from ground single crystal silicon ingot. The wafer has an off-orientation greater than the ground single crystal silicon ingot.