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公开(公告)号:US20240218557A1
公开(公告)日:2024-07-04
申请号:US18396266
申请日:2023-12-26
发明人: Carlo Zavattari , Michael Raffeiner , Paolo Delpero , Peter Albrecht , Fabrizio Bonda , Massimo Gariddi , Patrizio Pregnolato , Pietro Valcozzena , Maria Porrini
摘要: Methods for producing an off-orientation single crystal silicon wafer are disclosed. After a single crystal silicon ingot is grown, the single crystal silicon ingot is ground to increase an off-orientation of the single crystal silicon ingot. A wafer is sliced from ground single crystal silicon ingot. The wafer has an off-orientation greater than the ground single crystal silicon ingot.
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公开(公告)号:US20230390962A1
公开(公告)日:2023-12-07
申请号:US18327427
申请日:2023-06-01
CPC分类号: B28D5/0064 , B28D5/045 , B28D7/005
摘要: Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.
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