公开(公告)号：US20210384132A1

公开(公告)日：2021-12-09

申请号：US16892263

申请日：2020-06-03

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： BINHAO WANG ,  WAYNE VICTOR SORIN ,  MICHAEL RENNE TY TAN

IPC: H01L23/538 ,  H01L27/144 ,  H01L23/64 ,  H04B10/69 ,  H04J14/02

Abstract: A silicon interposer may include an on-chip DC blocking capacitor, comprising: a first electrical connection to couple to a supply voltage and to cathodes of a plurality of photodiodes formed in a two-dimensional photodiode array on a first substrate, and a second electrical connection to couple to ground and to ground inputs of a plurality of transimpedance amplifiers on a second substrate; wherein the on-chip DC blocking capacitor is configured to be shared among a plurality of receiver circuits comprising the plurality of photodiodes and the plurality of transimpedance amplifiers; and wherein the silicon interposer comprises a substrate separate from the first substrate and the second substrate.