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公开(公告)号:US20240039244A1
公开(公告)日:2024-02-01
申请号:US17875367
申请日:2022-07-27
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: STANLEY CHEUNG , DI LIANG , RAYMOND G. BEAUSOLEIL , MICHAEL RENNE TY TAN , WAYNE VICTOR SORIN
CPC classification number: H01S5/142 , H01S5/0265 , H01S5/1071
Abstract: Implementations disclosed herein provide semiconductor resonator based optical multiplexers that achieve enhanced bandwidth range of light emitted therefrom. The present disclosure integrates silicon devices into resonator structures, such as micro-ring resonators, that couples a side mode with a lasing mode and resonantly amplifies coupled light to output light having an enhanced bandwidth with respect to the lasing mode. In some examples, the optical multiplexers disclosed herein include a bus waveguide; a first resonator structure optically coupled to the bus waveguide and comprising an optical amplification mechanism that generates light and a single mode filter to force the generated light into single-mode operation; and a second resonator structure optically coupled to the first resonator structure and comprising a phase-tuning mechanism. The phase-tuning mechanism can be controlled to detune phase of light in the second resonator relative to the light in the first resonator.
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公开(公告)号:US20210384132A1
公开(公告)日:2021-12-09
申请号:US16892263
申请日:2020-06-03
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: BINHAO WANG , WAYNE VICTOR SORIN , MICHAEL RENNE TY TAN
IPC: H01L23/538 , H01L27/144 , H01L23/64 , H04B10/69 , H04J14/02
Abstract: A silicon interposer may include an on-chip DC blocking capacitor, comprising: a first electrical connection to couple to a supply voltage and to cathodes of a plurality of photodiodes formed in a two-dimensional photodiode array on a first substrate, and a second electrical connection to couple to ground and to ground inputs of a plurality of transimpedance amplifiers on a second substrate; wherein the on-chip DC blocking capacitor is configured to be shared among a plurality of receiver circuits comprising the plurality of photodiodes and the plurality of transimpedance amplifiers; and wherein the silicon interposer comprises a substrate separate from the first substrate and the second substrate.
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公开(公告)号:US20210013356A1
公开(公告)日:2021-01-14
申请号:US16569617
申请日:2019-09-12
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: ZHIHONG HUANG , XIAOGE ZENG , WAYNE VICTOR SORIN
IPC: H01L31/107 , H01L31/02 , G02B6/42
Abstract: Resonant cavity photodetector structures which integrate photodetection and filtering capabilities is described. A resonant cavity photodetector structure generally can comprise a region including a resonator, and an absorption region that can be integrated into a cavity of the resonator. The resonator can perform filtering that is suitable for high-bandwidth optical communications, such as Dense Wavelength Multiplexing (DWDM). In some cases, the resonator is a microring resonator. An absorption region can include a photodiode which performs optical energy detection acting as a photodetector, such as an avalanche photodiode (APD) wherein the photodiode. A coupling distance between the resonator region and the absorption region can be controlled, which allows control of a coupling strength between an optical mode of the resonator and the absorption region such that a quality factor (Q-factor) can be tuned. Thus, by adjusting the Q-factor, the resonant cavity photodetector structure can be tuned to achieve a desirable performance.
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