公开(公告)号：US09988263B2

公开(公告)日：2018-06-05

申请号：US14914215

申请日：2013-08-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Patrick Wayne Sadik ,  Roger A. McKay

IPC: H01L21/306 ,  B81C1/00 ,  B41J2/16

CPC classification number: B81C1/00063 ,  B41J2/162 ,  B41J2/1626 ,  B81B2201/052 ,  B81C2201/0115 ,  B81C2201/0133 ,  B81C2201/0181

Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.