-
公开(公告)号:US20160346714A1
公开(公告)日:2016-12-01
申请号:US15033000
申请日:2013-10-30
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: Roger A. McKay
CPC classification number: B01D29/0093 , B01D35/02 , B01D67/0062 , B01D69/02 , B01D2325/021 , B81B7/0061 , C23C14/5873 , C23C18/1603 , C23F1/00 , C23F1/02
Abstract: A method comprises forming etching islands on a substrate and exposing the substrate with etching islands to a solution that reacts with the etching islands to form a filter passage of interconnected pores in the substrate. The filter passage has an inlet into the substrate and an outlet from the substrate.
Abstract translation: 一种方法包括在衬底上形成蚀刻岛,并将具有蚀刻岛的衬底暴露于与蚀刻岛反应的溶液,以在衬底中形成互连孔的过滤通道。 过滤通道具有进入衬底的入口和来自衬底的出口。
-
公开(公告)号:US10086317B2
公开(公告)日:2018-10-02
申请号:US15033000
申请日:2013-10-30
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Roger A. McKay , Patrick W. Sadik
IPC: C23F1/00 , B01D35/02 , B01D29/00 , B81B7/00 , B01D69/02 , B01D67/00 , B81C1/00 , C23C14/58 , C23C18/16 , C23F1/02
Abstract: A method comprises forming etching islands on a substrate and exposing the substrate with etching islands to a solution that reacts with the etching islands to form a filter passage of interconnected pores in the substrate. The filter passage has an inlet into the substrate and an outlet from the substrate.
-
公开(公告)号:US09938139B2
公开(公告)日:2018-04-10
申请号:US15033015
申请日:2013-10-30
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Roger A. McKay , Patrick W. Sadik
CPC classification number: B81C1/00539 , B81B2201/058 , B81C1/00119 , B81C2201/0115 , B81C2201/014 , C23C14/5873 , C23F1/02 , C23F1/16 , H01M4/0492 , H01M4/386
Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.
-
公开(公告)号:US09988263B2
公开(公告)日:2018-06-05
申请号:US14914215
申请日:2013-08-30
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: Patrick Wayne Sadik , Roger A. McKay
IPC: H01L21/306 , B81C1/00 , B41J2/16
CPC classification number: B81C1/00063 , B41J2/162 , B41J2/1626 , B81B2201/052 , B81C2201/0115 , B81C2201/0133 , B81C2201/0181
Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.
-
公开(公告)号:US20160244885A1
公开(公告)日:2016-08-25
申请号:US15033015
申请日:2013-10-30
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor: Roger A. McKay , Patrick W. Sadik
IPC: C23F1/16
CPC classification number: B81C1/00539 , B81B2201/058 , B81C1/00119 , B81C2201/0115 , B81C2201/014 , C23C14/5873 , C23F1/02 , C23F1/16 , H01M4/0492 , H01M4/386
Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.
Abstract translation: 在基板的第一面和不平行于第一面的基板的第二面上形成蚀刻岛。 衬底的第一面和第二面同时暴露于与蚀刻岛反应的溶液,以同时形成延伸到第一面和第二面的多孔区域。
-
-
-
-