公开(公告)号：US20230282690A1

公开(公告)日：2023-09-07

申请号：US18179197

申请日：2023-03-06

Applicant: HUAWEI DIGITAL POWER TECHNOLOGIES CO., LTD.

Inventor： Chunkun JIAO

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/0607 ,  H01L29/4236 ,  H01L29/7827

Abstract: Example semiconductor devices, integrated circuits, and electronic devices are provided. One example semiconductor device includes an n-type semiconductor substrate, a drift layer, a semiconductor layer, a groove, a shielding structure, a source, and a drain. A p-type shielding structure is disposed at the drift layer. The p-type shielding structure includes a plurality of first shielding structures and a plurality of second shielding structures. Each first shielding structure extends in a first direction. Each second shielding structure extends in a second direction. The first direction intersects with the second direction. The plurality of first shielding structures and the plurality of second shielding structures are disposed in a grid shape.