Method of manufacture of liquid crystal device
    1.
    发明授权
    Method of manufacture of liquid crystal device 失效
    液晶装置的制造方法

    公开(公告)号:US3811180A

    公开(公告)日:1974-05-21

    申请号:US32528173

    申请日:1973-01-22

    CPC classification number: G02F1/135

    Abstract: The process for producing the liquid crystal device includes the steps of coating a high impedance material, such as evaporated zinc sulfide, onto a conductive coating supported upon the glass cover plate of the liquid crystal device. Next, the photoconductor layer of e.g. cadmium sulfide is vacuum-deposited. These layers are subjected to post-deposition thermal processing in the form of heat-treating in a substantially hydrogen sulfide atmosphere. Following thermal processing, the liquid crystal layer and the second cover plate are installed to complete the device.

    Abstract translation: 制造液晶装置的方法包括将诸如蒸发的硫化锌的高阻抗材料涂覆在支撑在液晶装置的玻璃盖板上的导电涂层上的步骤。 接下来,例如, 真空沉积硫化镉。 这些层在基本上硫化氢气氛中以热处理的形式进行后沉积热处理。 在热处理之后,安装液晶层和第二盖板来完成该装置。

    Liquid crystal device
    2.
    发明授权
    Liquid crystal device 失效
    液晶装置

    公开(公告)号:US3732429A

    公开(公告)日:1973-05-08

    申请号:US3732429D

    申请日:1971-11-12

    CPC classification number: G02F1/135

    Abstract: The liquid crystal device comprises a liquid crystal layer, a thin photoconductor layer, and a thin insulator layer sandwiched between the transparent supporting covers having a transparent electrically-conductive layer thereon. The photoconductor layer is cadmium sulphide (CdS) and the insulator layer is zinc sulphide (ZnS).

    Abstract translation: 液晶装置包括液晶层,薄感光体层和夹在其上具有透明导电层的透明支撑罩之间的薄绝缘体层。 光电导体层是硫化镉(CdS),绝缘体层是硫化锌(ZnS)。

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