公开(公告)号：US12094791B2

公开(公告)日：2024-09-17

申请号：US17286737

申请日：2019-10-10

申请人： Hitachi Energy Ltd

发明人： Jagoda Dobrzynska ,  Jan Vobecky ,  David Guillon ,  Tobias Wikstroem

IPC分类号： H01L23/10 ,  H01L21/56 ,  H01L23/051 ,  H01L23/31

CPC分类号： H01L23/051 ,  H01L21/565 ,  H01L23/10 ,  H01L23/3185

摘要： A power semiconductor device includes a semiconductor wafer having a junction and a junction termination laterally surrounding the junction. A protection layer covers the lateral side of the semiconductor wafer and covers the second main side at least in an area of the junction termination. A first metal disk is arranged on the first main side to cover the first main side of the semiconductor wafer. An interface between the first metal disk and the semiconductor wafer is a free floating interface. A metal layer sandwiched between the first metal disk and the semiconductor wafer.

公开(公告)号：US11967638B2

公开(公告)日：2024-04-23

申请号：US17600812

申请日：2020-04-01

申请人： Hitachi Energy Ltd

发明人： Tobias Wikstroem ,  Umamaheswara Vemulapati ,  Thomas Stiasny

IPC分类号： H01L29/74 ,  H01L29/66 ,  H01L29/745

CPC分类号： H01L29/7416 ,  H01L29/66371 ,  H01L29/7455

摘要： A power diode comprises a plurality of diode cells (10). Each diode cell (10) comprises a first conductivity type first anode layer (40), a first conductivity type second anode layer (45) having a lower doping concentration than the first anode layer (40) and being separated from an anode electrode layer (20) by the first anode layer (40), a second conductivity type drift layer (50) forming a pn-junction with the second anode layer (45), a second conductivity type cathode layer (60) being in direct contact with the cathode electrode layer (60), and a cathode-side segmentation layer (67) being in direct contact with the cathode electrode layer (30). A material of the cathode-side segmentation layer (67) is a first conductivity type semiconductor, wherein an integrated doping content of the cathode-side, which is integrated along a direction perpendicular to the second main side (102), is below 2·1013 cm−2, or a material of the cathode-side segmentation layer (67) is an insulating material. A horizontal cross-section through each diode cell (10) along a horizontal plane (K1) comprises a first area where the horizontal plane (K1) intersects the second anode layer (45) and a second area where the plane (K1) intersects the drift layer (50).