公开(公告)号：US20110050191A1

公开(公告)日：2011-03-03

申请号：US12870889

申请日：2010-08-30

申请人： Hitoshi TSUJI ,  Sadao YAMASHITA ,  Takao KAKINOKI

发明人： Hitoshi TSUJI ,  Sadao YAMASHITA ,  Takao KAKINOKI

IPC分类号： G05F1/10 ,  H01F5/00 ,  H01F27/255

CPC分类号： H02M3/155 ,  H01F17/0006 ,  H01F27/29 ,  H01F2017/0066

摘要： An inductor includes a coil electrode section in which a first spiral electrode and a second spiral electrode are wound in substantially the same direction, lie in substantially the same plane, and are connected to each other by a connection electrode. The coil electrode section is sandwiched by the first magnetic layer and the second magnetic layer from both directions substantially perpendicular to the plane. A first protrusion electrode and a second protrusion electrode at ends of the first spiral electrode and the second spiral electrode that are opposite to the connection electrode extend in a direction substantially perpendicular to the plane, have a length at which each of the protrusion electrodes protrudes from the first magnetic layer, and define opposite end electrodes of the inductor. Arranging this low-profile inductor on a mounting circuit board achieves a low-profile DC-DC converter including a two-layer structure.

摘要翻译： 电感器包括线圈电极部分，其中第一螺旋电极和第二螺旋电极以大致相同的方向缠绕，位于基本上相同的平面中，并且通过连接电极彼此连接。 线圈电极部分从基本垂直于该平面的两个方向被第一磁性层和第二磁性层夹在中间。 第一螺旋状电极和第二螺旋状电极的与连接电极相反的端部的第一突出电极和第二突出电极在大致垂直于该平面的方向上延伸的突起电极和第二突起电极的长度， 第一磁性层，并限定电感器的相对端电极。 将这种低轮廓电感器安排在安装电路板上，实现了包括两层结构的低轮廓DC-DC转换器。

公开(公告)号：US20100075576A1

公开(公告)日：2010-03-25

申请号：US12627333

申请日：2009-11-30

申请人： Yoichi KOBAYASHI ,  Shunsuke NAKAI ,  Hitoshi TSUJI ,  Yasuo TSUKUDA ,  Junki ISHIMOTO ,  Kazunari SHINYA

发明人： Yoichi KOBAYASHI ,  Shunsuke NAKAI ,  Hitoshi TSUJI ,  Yasuo TSUKUDA ,  Junki ISHIMOTO ,  Kazunari SHINYA

IPC分类号： B24B49/04 ,  B24B49/12

CPC分类号： B24B49/12 ,  B24B37/013

摘要： A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information. The polishing state monitoring apparatus further includes a spectral data generator for reading the electrical information accumulated by the light-receiving elements and generating spectral data of the reflected light, and a processor for calculating a predetermined characteristic value on the surface of the workpiece based on the spectral data generated by the spectral data generator.

摘要翻译： 抛光状态监视装置测量被抛光表面的特征值，以确定抛光终点的定时。 抛光状态监视装置包括用于将光从光源施加到被抛光的工件的表面的发光单元，用于接收来自工件表面的反射光的光接收单元，用于将反射的 由光接收单元接收的多个光具有各自的波长的光;以及用于将检测到的光线累积的光接收元件作为电信息。 抛光状态监视装置还包括：光谱数据发生器，用于读取由光接收元件累积的电信息并产生反射光的光谱数据;以及处理器，用于基于工件的表面计算工件表面上的预定特征值 光谱数据生成器生成的光谱数据。

公开(公告)号：US20120080776A1

公开(公告)日：2012-04-05

申请号：US13249094

申请日：2011-09-29

申请人： Akira KOMATSU ,  Hitoshi TSUJI ,  Kaori FUSE

发明人： Akira KOMATSU ,  Hitoshi TSUJI ,  Kaori FUSE

IPC分类号： H01L29/02 ,  H01L21/28

CPC分类号： H01L29/7811 ,  H01L21/76224 ,  H01L21/78 ,  H01L29/0661 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes: element formation regions each including a cell region where a semiconductor element is formed, a termination trench region; and a dicing line region including a groove separating the element formation regions. The termination trench region includes four trenches surrounding four sides of the cell region. Two of the trenches extend longitudinally in parallel to an X direction and the other two trenches extend longitudinally in parallel to a Y direction perpendicular to the X direction. The termination trench region is perpendicularly in contact with longitudinal sides of the dicing line region while the trenches extending longitudinally in parallel to the X direction intersect the trenches extending longitudinally in parallel to the Y direction at four corners of the element formation region, while vertical sections of the termination trench region in a cross direction are opened in four side surfaces of the element formation region.

摘要翻译： 半导体器件包括：元件形成区域，每个元件形成区域包括形成半导体元件的单元区域，端子沟槽区域; 以及切割线区域，其包括分离元件形成区域的槽。 端接沟槽区包括围绕电池区四周的四个沟槽。 两个沟槽中的两个平行于X方向纵向延伸，另外两个沟槽平行于垂直于X方向的Y方向纵向延伸。 终端沟槽区域垂直地与切割线区域的纵向侧面接触，而沿着X方向纵向延伸的沟槽与在元件形成区域的四个角处平行于Y方向纵向延伸的沟槽相交，而纵向部分 的端子沟槽区域在元件形成区域的四个侧表面中被打开。