公开(公告)号：US20110124162A1

公开(公告)日：2011-05-26

申请号：US12843738

申请日：2010-07-26

申请人： Hong-Koo LEE ,  Sung-Ki KIM ,  Jun-Hyeon BAE ,  Ki-Tae KIM

发明人： Hong-Koo LEE ,  Sung-Ki KIM ,  Jun-Hyeon BAE ,  Ki-Tae KIM

IPC分类号： H01L21/336

CPC分类号： H01L21/268 ,  H01L27/1248 ,  H01L27/1285

摘要： A method of fabricating an array substrate includes forming a gate line and a gate electrode; forming a gate insulating layer, an intrinsic amorphous silicon layer, an inorganic material insulating layer and a heat transfer layer on the gate line and the gate electrode; irradiating a laser beam onto the heat transfer layer to crystallize the intrinsic amorphous silicon layer into a polycrystalline silicon layer; removing the heat transfer layer; patterning the inorganic insulating material layer using a buffered oxide etchant to form an etch-stopper corresponding to the gate electrode forming an impurity-doped amorphous silicon layer and a metal layer on the etch-stopper and the polycrystalline silicon layer; patterning the metal layer to form a data line, a source electrode and a drain electrode and forming a pixel electrode on the passivation layer.

摘要翻译： 制造阵列基板的方法包括形成栅极线和栅电极; 在栅极线和栅电极上形成栅极绝缘层，本征非晶硅层，无机材料绝缘层和传热层; 将激光束照射到传热层上以将本征非晶硅层结晶成多晶硅层; 去除传热层; 使用缓冲的氧化物蚀刻剂来形成无机绝缘材料层，以形成对应于栅电极的蚀刻停止层，在蚀刻停止层和多晶硅层上形成杂质掺杂的非晶硅层和金属层; 图案化金属层以形成数据线，源电极和漏电极，并在钝化层上形成像素电极。