公开(公告)号：US20240243179A1

公开(公告)日：2024-07-18

申请号：US18622845

申请日：2024-03-29

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Hui Sun ,  Biao Gao ,  Zhibin Chen ,  Yong Hou

IPC: H01L29/423 ,  H01L21/285 ,  H01L21/3213 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/42316 ,  H01L21/28581 ,  H01L21/32134 ,  H01L21/32139 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes a channel layer and a barrier layer that are sequentially stacked, a doped layer, and a gate structure. The channel layer and the barrier layer each are made of a group III nitride material. The barrier layer includes a gate region. The doped layer is located on a side of the barrier layer that is away from the channel layer. The doped layer is located in the gate region. A material of the doped layer is a group III-V compound including a receptor-type doped element.