公开(公告)号：US20200052205A1

公开(公告)日：2020-02-13

申请号：US16655191

申请日：2019-10-16

Applicant: Huazhong University of Science and Technology

Inventor： Xiangshui MIAO ,  Qi LIN ,  Hao TONG

IPC: H01L45/00 ,  H01L27/24

Abstract: A selector device including a first metal electrode layer, a second metal electrode layer and a switching layer disposed between the first metal electrode layer and the second metal electrode layer. The switching layer is a stacked assembly of ABA, BAB, AB or BA, where A is an ion supply layer, and B is a conversion layer. The ion supply layer includes a chalcogenide metal material having a metal content of more than 0% and not more than 50 wt. % with respect to the chalcogenide metal material. The conversion layer includes a chalcogenide material.

公开(公告)号：US20210043255A1

公开(公告)日：2021-02-11

申请号：US17037655

申请日：2020-09-29

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui MIAO ,  Qi LIN ,  Hao TONG

IPC: G11C13/00

Abstract: An operating method for improving the performance of a selector device is provided, including: determining and applying a direct current (DC) or alternating current (AC) operating voltage and a limit current of the selector device, so that the selector device circulates until a off-state resistance is reduced; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is reduced to a minimum value; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased to a maximum value; and adjusting the operating voltage and the limit current, and performing DC or AC operation pulsed operation on a selector.