公开(公告)号：US3691694A

公开(公告)日：1972-09-19

申请号：US3691694D

申请日：1970-11-02

Applicant: IBM

Inventor： GOETZ FREDERICK E ,  HAUSE JAMES R

IPC: B24B37/08 ,  B24B7/00 ,  B24B9/00 ,  B24B29/00

CPC classification number: B24B37/08

Abstract: This patent relates to apparatus for removing and polishing opposite surfaces of a semiconductor wafer. The apparatus comprises a rotatable platen having an abrasive upper surface upon which a mask having suitable apertures therein for receiving wafers is positioned. A hoop is connected to the mask for imparting rotation thereof separately from the rotation of the platen. Overlying the mask and wafers is a second lapping means having an abrasive surface thereon for applying a uniform pressure upon the opposite surface of the wafer. Separate drive means cooperate with the second lapping means for separately driving the lapping means os that upon rotation of the platen, hoop and mask, and second lapping means the opposite planar surfaces of the wafer is brought into coplanarity while being polished. During the operation of the apparatus the surface of the wafers is continuously wetted with an excess quantity of a displacement plating solution containing, for example, a cupric or silver nitrate and a fluoride anion, the solution being maintained preferably at a pH of less than 7.

Abstract translation: 该专利涉及用于去除和抛光半导体晶片的相对表面的设备。 该装置包括具有磨料上表面的可旋转压盘，定位有用于接收晶片的具有合适孔的掩模。 一个箍连接到掩模上，用于与压板的旋转分开地转动。 覆盖掩模和晶片是第二研磨装置，其上具有用于在晶片的相对表面上施加均匀压力的研磨表面。 单独的驱动装置与第二研磨装置配合，用于单独驱动研磨装置os，当台板，箍和掩模旋转时，和第二研磨装置，晶片的相对的平坦表面在抛光时被共面。 在设备运行期间，晶片的表面用过量的含有例如铜或硝酸银和氟化物阴离子的置换镀液持续润湿，该溶液优选保持在小于7的pH 。