公开(公告)号：US3271748A

公开(公告)日：1966-09-06

申请号：US25090863

申请日：1963-01-11

Applicant: IBM

Inventor： ELFANT ROBERT F ,  MAZZEO NICHOLAS J

IPC: G11C7/02 ,  G11C11/06

CPC classification number: G11C11/06085 ,  G11C11/06014 ,  Y10T29/49069

公开(公告)号：US3585616A

公开(公告)日：1971-06-15

申请号：US3585616D

申请日：1968-12-24

Applicant: IBM

Inventor： MAZZEO NICHOLAS J

IPC: G01L19/08 ,  G11C11/04 ,  G11C11/15 ,  G11C11/14

CPC classification number: G11C11/04 ,  G01L19/08 ,  G11C11/15

Abstract: A coupled film magnetic memory element is disclosed which incorporates a field applying element which is disposed between a substrate and the lower of two orthogonally disposed conductors. In a preferred embodiment, a pair of closed easy axis (CEA) magnetic films are disposed about a bit conductor. These elements are disposed orthogonally relative to a word conductor and a field applying magnetic material which is disposed in underlying and coextensive relationships with the word line. A conductive substrate is disposed adjacent the field applying film and supports all the above described elements. In arrangements having fast pulse rise times, a pulse applied to the word line produces a high field in the field applying film such that for a given amount flux to be made available for switching a storage film, a substantially smaller word current is required. In addition, because the bit line is spaced further from the substrate, it presents a high impedance and consequently provides a higher sense voltage at the input of a sense amplifier.

公开(公告)号：US3134096A

公开(公告)日：1964-05-19

申请号：US20640362

申请日：1962-06-29

Applicant: IBM

Inventor： BARTKUS EDWARD A ,  ELFANT ROBERT F ,  GREBE KURT R ,  MAZZEO NICHOLAS J

IPC: G11C7/02 ,  G11C11/06

CPC classification number: G11C11/06085 ,  G11C11/06014 ,  Y10T29/49069