公开(公告)号：US3580066A

公开(公告)日：1971-05-25

申请号：US3580066D

申请日：1969-06-19

Applicant: IBM

Inventor： PLISKIN WILLIAM A ,  TAYLOR JAMES E

IPC: H01L21/66 ,  C23F1/00 ,  H01L21/306 ,  H01L23/29 ,  G01N13/00

CPC classification number: H01L23/291 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The method for determining the completeness of etching of an oxide from a silicon semiconductor device discloses that bare silicon surfaces are hydrophobic while clean freshly etched oxide surfaces are hydrophilic. To determine whether the silicon is exposed, and therefore free of any oxide film subsequent to etching, the device is cooled and subjected to a stream of moist gas and observed under a microscope. If the etching process by which small holes are formed is incomplete, oxide will remain in the hole and therefore a film of condensed water will form in the holes indicating incomplete etching. If the etching process has been properly completed in the holes, bare silicon will remain causing the moisture to form in small droplets. The form of the moisture can be observed through the microscope.