公开(公告)号：US20210191829A1

公开(公告)日：2021-06-24

申请号：US17262696

申请日：2018-09-15

Applicant: INTEL CORPORATION

Inventor： Satish MUTHIYALU ,  Yingwen CHEN ,  Yu YU ,  Tao XU

IPC: G06F11/20 ,  G06F13/24

Abstract: Runtime memory cell row defect detection and replacement includes detecting in a memory of a computer system operating in a runtime operating system mode, a defective row of memory cells having at least one defective cell. In response to the detection of the defective row, interrupting the operating system of the computer system and, in a runtime system maintenance mode, replacing the defective row of memory cells with a spare row of memory cells as a replacement row of memory cells. Execution of the operating system is then resumed in the runtime operating system mode Other aspects and advantages are described.