公开(公告)号：US20200043694A1

公开(公告)日：2020-02-06

申请号：US16485084

申请日：2018-02-12

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: H01J37/08 ,  G02B1/113 ,  H01J37/317

Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)−1/2 and 1017×(M/14)−1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.

公开(公告)号：US10923310B2

公开(公告)日：2021-02-16

申请号：US16485084

申请日：2018-02-12

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: H01J37/08 ,  G02B1/113 ,  H01J37/317 ,  G06F3/041

Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)−1/2 and 1017×(M/14)−1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.

公开(公告)号：US20190352770A1

公开(公告)日：2019-11-21

申请号：US16482959

申请日：2018-02-02

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: C23C14/48 ,  C23C14/58

Abstract: Method of antireflection and scratch-resistant treatment of a synthetic sapphire material where the acceleration voltage of the ions is between 5 kV and 1000 kV and is chosen in order to create an implanted layer having a thickness equal to a multiple of 100 nm; the microwave-induced annealing temperatures in the implanted surface are between 800° C. and 2000° C. with annealing times of between 1 and 1000 seconds. Synthetic sapphire materials are thus advantageously obtained where the reflection on the treated face is reduced by at least half while maintaining a hardness of greater than or equal to 8.