公开(公告)号：US09857314B1

公开(公告)日：2018-01-02

申请号：US15392713

申请日：2016-12-28

Applicant: Industrial Technology Research Institute

Inventor： Fu-Cheng Yang ,  Chia-Liang Yeh ,  Wei-Hsiung Tsai ,  Keng-Li Lin ,  Yeou-Sung Lin ,  Mao-Sheng Huang

IPC: G01J3/00 ,  G01N21/958 ,  G01N21/47 ,  G01N21/95

CPC classification number: G01N21/958 ,  G01N21/4788 ,  G01N2021/9513

Abstract: A device and method for detecting crystal quality of a low temperature poly-silicon (LTPS) backplane are provided, the method including: projecting narrowband light to the LTPS backplane; performing image capturing of each position on a surface of the LTPS backplane at a first angle in a first axial direction to obtain a first diffraction image, the first angle being an angle of maximum diffraction light intensity in the first axial direction; performing another image capturing of each position on the surface of the LTPS backplane at a second angle in a second axial direction to obtain a second diffraction image, the second angle being an angle of maximum diffraction light intensity in the second axial direction; and determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution obtained from the first and second diffraction images.