公开(公告)号：US20220018023A1

公开(公告)日：2022-01-20

申请号：US17370386

申请日：2021-07-08

Applicant: Infineon Technologies AG

Inventor： Matthias Kuenle ,  Olaf Fiedler ,  Thomas Huber ,  Christian Illemann ,  Mathias Male

IPC: C23C16/455 ,  C23C16/46

Abstract: A processing chamber includes a chamber body, a substrate support configured to hold a substrate in place, and a pre-heat ring having a central opening sized to be disposed around the substrate. A process gas inlet is configured to direct process gas in a lateral direction to flow over the pre-heat ring and the substrate. A process gas flow deflector includes a radially outer mounting portion and a radially inner blade-shaped process gas deflection portion extending in a radial direction. The radially inner blade-shaped process gas deflection portion is shaped as a ring segment. The radially inner blade-shaped process gas deflection portion is disposed above the process gas inlet and dimensioned to overlap with the pre-heat ring, wherein a degree of overlap between the pre-heat ring and process gas flow deflector in the radial direction is at least ½ of the radial dimension of the pre-heat ring.

公开(公告)号：US12018369B2

公开(公告)日：2024-06-25

申请号：US17370386

申请日：2021-07-08

Applicant: Infineon Technologies AG

Inventor： Matthias Kuenle ,  Olaf Fiedler ,  Thomas Huber ,  Christian Illemann ,  Mathias Male

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/455 ,  C23C16/45504 ,  C23C16/45563 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/46

Abstract: A processing chamber includes a chamber body, a substrate support configured to hold a substrate in place, and a pre-heat ring having a central opening sized to be disposed around the substrate. A process gas inlet is configured to direct process gas in a lateral direction to flow over the pre-heat ring and the substrate. A process gas flow deflector includes a radially outer mounting portion and a radially inner blade-shaped process gas deflection portion extending in a radial direction. The radially inner blade-shaped process gas deflection portion is shaped as a ring segment. The radially inner blade-shaped process gas deflection portion is disposed above the process gas inlet and dimensioned to overlap with the pre-heat ring, wherein a degree of overlap between the pre-heat ring and process gas flow deflector in the radial direction is at least ½ of the radial dimension of the pre-heat ring.

公开(公告)号：US20230275033A1

公开(公告)日：2023-08-31

申请号：US18109616

申请日：2023-02-14

Applicant: Infineon Technologies AG

Inventor： Thomas Huber ,  Matthias Kuenle ,  Iris Moder ,  Joerg Ortner

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54426

Abstract: A semiconductor substrate includes a semiconductor base substrate. An alignment structure is formed on a surface of the semiconductor base substrate. An epitaxial layer is deposited on the surface of the semiconductor base substrate. The alignment structure includes an area of the surface of the semiconductor base substrate that is formed as a groove pattern. Grooves of the groove pattern are aligned with a specific crystallographic direction of the semiconductor base substrate. The specific crystallographic direction provides for a slower epitaxial growth rate on such a groove-patterned base substrate surface area compared to epitaxial growth on a surface of the semiconductor base substrate adjacent to the groove-patterned area.