公开(公告)号：US12077857B2

公开(公告)日：2024-09-03

申请号：US18222024

申请日：2023-07-14

Applicant: ASM IP Holding B.V.

Inventor： SungHoon Jun ,  HeeChul Jung ,  YonJong Jeon

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/455 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52

Abstract: Exemplary embodiments of the disclosure provide improved reactor systems, assemblies, and methods for controlling a temperature within the reactor system, such as a temperature of a gas supply unit. Exemplary systems and methods employ an exhaust unit to cause movement of a fluid over a portion of the gas supply unit to better control the temperature of the gas supply unit.

公开(公告)号：US12068180B2

公开(公告)日：2024-08-20

申请号：US16247026

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Xuesong Lu ,  Lin Zhang ,  Joseph C. Werner ,  Jang Seok Oh ,  Balaji Pasupathy ,  Michael W. Johnson

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  G01K3/00 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67248 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  G01K3/005 ,  G01K3/04 ,  G01K3/10 ,  G05B11/00 ,  G05B13/02 ,  G05B15/00 ,  G05B15/02 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02 ,  H01L21/02312 ,  H01L21/67 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/68742 ,  H01J2237/24585 ,  H01J2237/3321

Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

公开(公告)号：US12037701B2

公开(公告)日：2024-07-16

申请号：US17218892

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Shu-Kwan Danny Lau ,  Brian H. Burrows ,  Lori Washington ,  Herman Diniz ,  Martin A. Hilkene ,  Richard O. Collins ,  Nyi O. Myo ,  Manish Hemkar ,  Schubert S. Chu

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/105 ,  H01L21/6719 ,  C30B25/08

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

公开(公告)号：US20240218508A1

公开(公告)日：2024-07-04

申请号：US18609379

申请日：2024-03-19

Applicant: ASM IP Holding B.V.

Inventor： Aniket Nitin Patil ,  Saket Rathi ,  Sam Kim ,  Shiva K.T. Rajavelu Muralidhar

IPC: C23C16/455 ,  B23Q3/00 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/455 ,  B23Q3/00 ,  C23C16/4582 ,  C23C16/52

Abstract: A fixture is provided. The fixture includes a base, a turntable, a first sensor, and a second sensor. The turntable is supported on the base, is rotatable about a rotation axis, and is configured to slidably seat a susceptor assembly for rotation about the rotation axis. The first sensor is fixed relative to the base, is radially offset from the rotation axis, and is configured to determine ex-situ runout of the susceptor assembly. The second sensor is fixed relative to the first sensor, is axially offset from the first sensor, and is configured to determine ex-situ wobble of the susceptor assembly. Fixture arrangements and methods of determining ex-situ runout and ex-situ wobble of susceptor assemblies for semiconductor processing systems are also described.

公开(公告)号：US12014922B2

公开(公告)日：2024-06-18

申请号：US17592091

申请日：2022-02-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Tsai-Fu Hsiao ,  Kuang-Yuan Hsu ,  Pei-Ren Jeng ,  Tze-Liang Lee

IPC: C23C16/455 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45593 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67754 ,  H01L21/6776 ,  H01L21/68764 ,  H01L21/68771 ,  C23C16/45561

Abstract: An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

公开(公告)号：US20240021444A1

公开(公告)日：2024-01-18

申请号：US18074239

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Manjunath SUBBANNA ,  Ala MORADIAN ,  Errol Antonio C. SANCHEZ ,  Zuoming ZHU ,  Peydaye Saheli GHAZAL ,  Martin Jeffrey SALINAS ,  Aniketnitin PATIL ,  Raja Murali DHAMODHARAN ,  Shu-Kwan LAU

IPC: H01L21/67 ,  H01L21/20 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/67017 ,  H01L21/67103 ,  H01L21/20 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67739

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.

公开(公告)号：US20230383399A1

公开(公告)日：2023-11-30

申请号：US18446392

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Yi SHEN ,  Hsin-Lin WU ,  Yao-Fong DAI ,  Pei-Yuan TAI ,  Chin-Wei CHEN ,  Yin-Tun CHOU ,  Yuan-Hsin CHI ,  Sheng-Yuan LIN

IPC: C23C14/56 ,  H01L21/687 ,  C23C16/455 ,  C23C14/50

CPC classification number: C23C14/564 ,  H01L21/68735 ,  H01L21/68771 ,  C23C16/455 ,  C23C14/50

Abstract: The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.

公开(公告)号：US11788187B2

公开(公告)日：2023-10-17

申请号：US17004707

申请日：2020-08-27

Applicant: Halliburton Energy Services, Inc.

Inventor： Christopher Michael Jones ,  James M. Price ,  William Joseph Soltmann ,  Jian Li

IPC: C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/02 ,  C23C16/52

CPC classification number: C23C16/045 ,  C23C16/0209 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/52

Abstract: A coating system for coating an interior surface of a housing comprising: first and second closures engaging first and second ends, respectively, of the housing to provide an enclosed volume; first and second flow lines coupled to the first and second closures, respectively, the first flow line and/or the second flow line connected to an inert gas source; a reactant gas source(s) comprising a reactant gas and coupled to the first and/or second flow line; and a controller in electronic communication with the reactant gas and inert gas sources, and configured to control flow of inert gas into the enclosed volume, and counter current injection of reactant gas from the reactant gas source(s) into the enclosed volume whereby introduction of pulse(s) of the reactant gas into the enclosed volume are separated by introduction of inert gas into the enclosed volume, and coating layer(s) are deposited on the interior surface.

公开(公告)号：US11749525B2

公开(公告)日：2023-09-05

申请号：US17690604

申请日：2022-03-09

Applicant: NuFlare Technology, Inc.

Inventor： Yoshiaki Daigo ,  Akio Ishiguro ,  Hideki Ito

IPC: C30B25/12 ,  C23C16/32 ,  C23C16/458 ,  C23C16/46 ,  C23C28/04 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  C30B29/68 ,  H01L21/02 ,  H01L29/16 ,  H01L29/167 ,  C30B25/16 ,  C23C16/455

CPC classification number: C30B25/12 ,  C23C16/325 ,  C23C16/4584 ,  C23C16/46 ,  C23C28/04 ,  C30B25/10 ,  C30B25/14 ,  C30B29/36 ,  C30B29/68 ,  H01L21/0262 ,  H01L21/02529 ,  H01L21/02576 ,  H01L29/167 ,  H01L29/1608 ,  C23C16/455 ,  C30B25/165

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.

公开(公告)号：US11692266B2

公开(公告)日：2023-07-04

申请号：US16717326

申请日：2019-12-17

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu Umeta ,  Yoshishige Okuno ,  Rimpei Kindaichi

IPC: C23C16/455 ,  C30B25/14 ,  C30B25/12 ,  H01L21/02 ,  C23C16/32 ,  C23C16/46 ,  C30B29/36 ,  H01L21/205

CPC classification number: C23C16/455 ,  C23C16/325 ,  C23C16/46 ,  C30B25/12 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/205

Abstract: Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.